IRF3205 MOSFET 55V 110A N-Channel HEXFET Power MOSFET TO-220
VAT inclusive; Computed calculations added locally.
Overview
The IRF3205 N-Channel HEXFET Power MOSFET is designed for high-current and high-power switching applications where low conduction losses and efficient switching are important. With a 55V drain-source voltage rating, 110A continuous drain current rating, and 8mΩ RDS(on), it is well suited for demanding power electronics projects.
The IRF3205 features an N-channel configuration and a standard TO-220 package, making it easy to integrate into many power control circuits. It can be used in applications such as DC motor controllers, H-bridge circuits, DC-DC converters, battery-powered systems, power supplies, and high-current switching circuits.
Its low on-resistance helps reduce conduction losses when the MOSFET is fully switched on. The device also supports a 20V gate-source voltage rating and has a maximum power dissipation rating of 200W, subject to appropriate thermal management and operating conditions.
Note: Same Batch/Lot or Part Numbers are not guaranteed. Return at Change of mind for this reason is not accepted.
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Product Technical Information
Technical Details
The IRF3205 MOSFET is an N-channel power transistor intended for high-current switching applications. Its low 8mΩ on-resistance helps minimize conduction losses when operated under suitable conditions.
The device can be controlled through its gate terminal and is commonly used as a switching element in circuits requiring efficient control of motors, converters, power supplies, and battery-powered loads.
The standard TO-220 package allows the MOSFET to be mounted on a suitable heatsink when required. Actual current-handling capability depends on factors such as junction temperature, PCB design, thermal resistance, switching conditions, and adequate cooling.
Features
- N-channel power MOSFET
- IRF3205 model
- 55V drain-source voltage rating
- 110A continuous drain current rating
- Low 8mΩ RDS(on)
- 20V gate-source voltage rating
- 146nC typical gate charge
- TO-220 package
- High power switching capability
- Suitable for motor and power-control applications
Applications
- DC motor control
- H-bridge motor controllers
- DC-DC converters
- Switching power supplies
- Battery-powered equipment
- High-current switching circuits
- Inverter circuits
- Power management systems
- Robotics and automation projects
- DIY power electronics
How It Works
The IRF3205 uses a voltage applied to its gate to control current flow between the drain and source terminals. When the MOSFET is switched on with an appropriate gate drive, it provides a low-resistance path between drain and source.
Its low RDS(on) helps reduce conduction losses during the on-state. For high-current or high-power applications, appropriate gate-drive circuitry, PCB traces, wiring, heatsinking, and thermal design are essential.
Important Notes
- The 110A current figure is a maximum device rating under specified conditions and should not be treated as a guaranteed operating current in every circuit.
- Actual current capability depends heavily on thermal conditions, package limitations, PCB layout, and cooling.
- The IRF3205 should be driven with an appropriate gate voltage to achieve its specified low RDS(on).
- Do not exceed the 55V drain-source voltage rating.
- Do not exceed the ±20V gate-source voltage rating.
- Use suitable heatsinking and thermal management for high-power applications.
- Verify the MOSFET pinout and circuit polarity before installation.
- Product appearance and markings may vary between production batches.
Package Includes
- 1 × IRF3205 N-Channel MOSFET
Frequently Asked Questions
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